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标题: 请川办发下MOS管 K3591 的参数，谢谢。 [打印本页]

作者: yangzq 时间: 2013-1-1 20:40
标题: 请川办发下MOS管 K3591 的参数，谢谢。

在网上没有找到，

作者: 四川办事处 时间: 2013-1-1 21:05
NEC的2SK3591吧，150V耐压，30毫欧内阻，根本不应该用于控制器，问这干什么

作者: 夏正权 时间: 2013-1-1 21:26
1
TO-220F
Item Symbol Ratings Unit
Drain-source voltage VDS 150
VDSX *5 120
Continuous drain current ID ±40
Pulsed drain current ID(puls] ±160
Gate-source voltage VGS ±30
Non-repetitive Avalanche current IAS *2 40
Maximum Avalanche Energy EAS *1 387
Maximum Drain-Source dV/dt dVDS/dt *4 20
Peak Diode Recovery dV/dt dV/dt *3 5
Max. power dissipation PD Ta=25°C 2.16
Tc=25°C 70
Operating and storage Tch +150
temperature range Tstg
Isolation voltage VISO *6 2
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3591-01MR
FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Test Conditions
Zero gate voltage drain current IDSS
VDS=150V VGS=0V
VDS=120V VGS=0V
VGS=±30V
ID=20A VGS=10V
ID=20A VDS=25V
VCC=48V ID=20A
VGS=10V
RGS=10 Ω
Min. Typ. Max. Units
V
V
μA
nA
mΩ
S
pF
nC
A
V
μs
μC
ns
Min. Typ. Max. Units
Thermal resistance
Rth(ch-c) channel to case
Rth(ch-a) channel to ambient
1.786
58.0
°C/W
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID= 250μA VGS=0V
ID= 250μA VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=75V
VGS=0V
f=1MHz
VCC=75V
ID=40A
VGS=10V
L=100μH Tch=25°C
IF=40A VGS=0V Tch=25°C
IF=40A VGS=0V
-di/dt=100A/μs Tch=25°C
V
V
A
A
V
A
mJ
kV/μs
kV/μs
W
°C
°C
kVrms
150
3.0 5.0
25
250
10 100
31 41
13 26
1940 2910
310 465
24 36
20 30
26 39
50 75
20 30
52 78
15 22.5
18 27
40
1.10 1.65
0.14
0.77
-55 to +150
Outline Drawings (mm)
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
Super FAP-G Series
*1 L=335μH, Vcc=48V *2 Tch<= 150°C *3 IF <= -ID, -di/dt=50A/μs, Vcc <= BVDSS, Tch <= 150°C

作者: yangzq 时间: 2013-1-1 22:12
谢谢川办、夏正权。

是充电器上的

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